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all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f description the PTFA261301E and ptfa261301f are thermally-enhanced 130-watt, internally-matched gold mo s ? fets intended for ultra-linear applications. they are characterized for cdma, cdma2000, super3g (3gpp tsg ran), and wimax operation from 2620 to 2680 mhz. full gold metallization ensures excellent device lifetime and reliability. thermally-enhanced high power rf ldmos fets 130 w, 2.62 ? 2.68 ghz 3-carrier cdma2000 performance at 28 volts i dq = 1.4 a, ? = 2680 mhz -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 output power, avg. (w) adj. channel power ratio (dbc) 0 5 10 15 20 25 30 drain efficiency (%) alt2 alt efficiency acpr rf performance cdma is-95 measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 1.4 a, p out = 26 w average, ? = 2680 mhz characteristic symbol min typ max unit adjacent channel power ratio acpr ? ?45 ? dbc gain g ps ? 13 ? db drain efficiency h d ? 24 ? % *see infineon distributor for future availability. PTFA261301E package h-30260-2 ptfa261301f package h-31260-2 features ? thermally-enhanced, pb-free packages, rohs-compliant ? broadband internal matching ? typical cdma performance at 2.68 ghz - average output power = 26 w - linear gain = 13 db - efficiency = 24% ? typical cw performance, 2680 mhz, 28 v - output power at p?1db = 152 w - efficiency = 47% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 130 w (cw) output power
data sheet 2 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f rf performance (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 1.4 a, p out = 130 w pep, ? = 2680 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 12.5 13.5 ? db drain efficiency h d 34.5 36 ? % intermodulation distortion imd ? ?28.5 ?27 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.07 ? w operating gate voltage v ds = 28 v, i dq = 1.4 a v gs 2.0 2.4 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 449 w above 25c derate by 2.56 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 130 w cw) r q jc 0.39 c/w ordering information type package outline package description marking PTFA261301E h-30260-2 thermally-enhanced slotted flange, single-ended PTFA261301E ptfa261301f h-31260-2 thermally-enhanced earless flange, single-ended ptfa261301f *see infineon distributor for future availability.
data sheet 3 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f cdma is-95 at 28 volts i dq = 1.4 a, ? = 2680 mhz, tone spacing = 1 mhz -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 output power, avg. (w) adj. channel power ratio (dbc) 0 5 10 15 20 25 30 drain efficiency (%) acpr efficiency alt2 alt cdma is-95 at 32 volts i dq = 1.4 a, ? = 2680 mhz, tone spacing = 1 mhz -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 output power, avg. (w) adj. channel power ratio (dbc) 0 5 10 15 20 25 30 drain efficiency (%) acpr efficiency alt alt2 typical performance (data taken in a production test fixture) two?tone performance at 28 v i dq = 1.4 a, ? = 2680 mhz, tone spacing = 1 mhz -70 -60 -50 -40 -30 -20 -10 0 0 20 40 60 80 100 output power, avg. (w) im3, 5, 7 (dbc) 5 10 15 20 25 30 35 40 drain efficiency (%) efficiency im7 im3 im5 two-tone performance at 32 v i dq = 1.4 a, ? = 2680 mhz, tone spacing = 1 mhz -70 -60 -50 -40 -30 -20 -10 0 0 20 40 60 80 100 output power, avg. (w) im3, 5, 7 (dbc) 5 10 15 20 25 30 35 40 drain efficiency (%) efficiency im7 im3 im5
data sheet 4 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f cw drive-up efficiency i dq = 1.4 a, ? = 2680 mhz 10 20 30 40 50 60 0 50 100 150 200 output power (w) drain efficiency (%) 27 v 28 v 32 v typical performance (cont.) cdma2000 performance at 32 volts i dq = 1.4 a, ? = 2680 mhz, tone spacing = 1 mhz -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 output power, avg. (w) adj. channel power ratio (dbc) 0 5 10 15 20 25 30 drain efficiency (%) alt2 alt efficiency acpr gain and return loss vs. frequency v dd = 28 v, i dq = 1.4 a, p out = 30 w 10 11 12 13 14 15 2.60 2.62 2.64 2.66 2.68 2.70 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 return loss (db) return loss gain power sweep v dd = 28 v, ? = 2680 mhz 12 13 14 15 35 40 45 50 55 output power (dbm) power gain (db) i dq = 1.4 a i dq = 1.1 a i dq = 1.7 a
data sheet 5 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f gain & efficiency vs. output power v dd = 28 v, i dq = 1.4 a, ? = 2680 mhz 10 11 12 13 14 15 16 35 40 45 50 55 output power (dbm) gain (db) 0 10 20 30 40 50 60 drain efficiency (%) efficiency gain gain & efficiency vs. output power v dd = 32 v, i dq = 1.4 a, ? = 2680 mhz 10 11 12 13 14 15 16 35 40 45 50 55 output power (dbm) gain (db) 0 10 20 30 40 50 60 drain efficiency (%) efficiency gain 2-tone performance gain, efficiency & rl vs. frequency v dd = 28 v, i dq = 1.4 a, p out = 65 w 10 15 20 25 30 35 40 2580 2600 2620 2640 2660 2680 2700 frequency (mhz) gain (db), efficiency (%) -20 -15 -10 -5 input return loss (db) gain efficiency rl typical performance (cont.) 3-carrier cdma2000 performance v dd = 28 v, i dq = 1.4 a, ? = 2680 mhz 0 10 20 30 40 50 60 35 38 41 44 47 50 output power, avg. (dbm) drain efficiency (%) -70 -65 -60 -55 -50 -45 -40 adjacent channel power ratio (dbc) acp, 90c alt, 90c acp, 25c alt, 25c efficiency, 90c efficiency, 25c
data sheet 6 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f wimax performance v dd = 28 v, i dq = 1.25 a, (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) 0 5 10 15 20 25 30 15 20 25 30 35 40 45 50 output power (dbm) efficiency (%) -45 -40 -35 -30 -25 -20 -15 evm (dbc) efficiency ? = 2.62 ghz ? = 2.68 ghz ? = 2.65 ghz bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.28 a 0.83 a 1.39 a 2.09 a 4.17 a 6.26 a 8.34 a 10.43 a 12.52 a typical performance (cont.) wimax performance v dd = 28 v, i dq = 1.25 a, ? = 2650 mhz, (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) -45 -40 -35 -30 -25 -20 15 20 25 30 35 40 45 50 output power (dbm) evm (db) t = +25 c t = +85 c t = ?20 c wimax performance v dd = 28 v, ? = 2650 mhz (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) -45 -40 -35 -30 -25 -20 15 20 25 30 35 40 45 50 output power (dbm) evm (db) i dq = 0.80 a i dq = 1.75 a i dq = 1.25 a
data sheet 7 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f 0 . 1 0 . 2 0 . 1 0 . 1 0 . 2 h s t o w a r d g e n e r a t < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 z source 2710 mhz 2710 mhz 2590 mhz z load 2590 mhz z source z load g s d frequency z source w z load w mhz r jx r jx 2590 6.7 0.45 1.6 ?2.7 2620 5.8 ?0.1 1.5 ?2.8 2650 5.8 0.4 1.4 ?3.0 2680 6.3 0.3 1.5 ?3.4 2710 5.4 0.3 1.3 ?3.7 see next page for circuit information z 0 = 50 w broadband circuit impedance
data sheet 8 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f a 2 6 1 3 0 1 e f _ s c h dut rf_in rf_out r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 v dd qq1 q1 r5 5.1k v 4.5pf 10f 35v 4.5pf 0.1f 1.0pf l 1 l 2 l 3 l 4 l 8 l 9 10 v r6 r7 c5 c4 c6 c8 c9 v 5.1k l 6 l 5 c7 0.7pf l 7 4.5pf 1f 10f 50v 4.5pf 0.1f 4.5pf 1f 0.1f l 10 l 13 l 14 c10 c11 c12 c19 c17 c16 c15 c14 l1 l2 l 11 l 12 0.5pf c18 v dd c13 10f 50v c1 0.001f reference circuit reference circuit schematic for ? = 2680 mhz circuit assembly information dut PTFA261301E or ptfa261301f ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 2680 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.123 l , 50.0 w 7.47 x 1.47 0.294 x 0.058 l 2 0.137 l , 41.3 w 8.18 x 1.91 0.322 x 0.075 l 3 0.018 l , 41.3 w 1.09 x 1.91 0.043 x 0.075 l 4 0.080 l , 59.0 w 4.95 x 1.02 0.195 x 0.040 l 5 0.265 l , 59.0 w 16.33 x 1.02 0.643 x 0.040 l 6 0.022 l , 14.7 w 1.22 x 7.62 0.048 x 0.300 l 7 0.090 l , 8.0 w 4.88 x 15.24 0.192 x 0.600 l 8, l 9 0.250 l , 55.0 w 15.37 x 1.17 0.605 x 0.046 l 10 0.056 l , 4.8 w 3.35 x 29.85 0.132 x 1.175 l 11 (taper) 0.117 l , 4.8 w / 50.0 w 6.35 x 29.85 / 1.42 0.250 x 1.175 / 0.056 l 12 0.036 l , 50.0 w 2.16 x 1.42 0.085 x 0.056 l 13 0.113 l , 50.0 w 6.86 x 1.42 0.270 x 0.056 l 14 0.057 l , 50.0 w 3.48 x 1.42 0.137 x 0.056 1 electrical characteristics are rounded.
data sheet 9 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f reference circuit assembly diagram (not to scale)* reference circuit (cont.) component description suggested supplier p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 366-1655-2-nd c5, c12, c16 capacitor, 0.1 f digi-key pcc104bct-nd c6, c8, c10, ceramic capacitor, 4.5 pf atc 100b 4r5 c14, c19 c7 ceramic capacitor, 0.7 pf atc 100b 0r7 c9 ceramic capacitor, 1.0 pf atc 100b 1r0 c11, c15 capacitor, 1.0 f toshiba c4532xtrza105m c13, c17 tantalum capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c18 ceramic capacitor, 0.5 pf atc 100b 0r5 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r7 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd r6 chip resistor, 10 ohms digi-key p10ect-nd *gerber files for this circuit available on request a261301ef_assy-05-09-30 a261301in_01 a261301out_01 c1 c5 c3 qq1 c2 r5 r3 r2 r1 c11 c10 lm c8 c9 c15 c19 c18 c16 c14 r6 r7 c6 c7 c12 l2 l1 c4 q1 c17 c13 v dd v dd v dd r4 a261301ef_dtl qq1 lm c7 v dd c1 r1 r2 c3 r3 r6 q1 c4 c5 r5 r7 c2 r4 c6
data sheet 10 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f package outline specifications package h-30260-2 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 260-cases_30260 0.0381 [.0015] -a- 22.350.23 [.880.009] (2x 4.830.50 [.190.020]) 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [.060] 2x 3.25 [.128] 1.02 [.040] 27.94 [1.100] 34.04 [1.340] d s g flange 13.72 [.540] 45 x (2.03 [.080]) sph 1.57 [.062] 2x 1.63 [.064] r 4.110.38 [.162.015] [.520 ] +.004 ?.006 lid 13.21 +0.10 ?0.15 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch]
data sheet 11 of 12 rev. 07, 2007-04-04 PTFA261301E ptfa261301f package outline specifications package h-31260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 260-cases_31260 sph 1.57 [.062] 1.02 [.040] 23.370.51 [.920.020] 2x 12.70 [.500] 45 x 2.031 [.080] d g s -a- 4.110.38 [.162.015] lid 22.350.23 [.880.009] flange 23.11 [.910] 13.72 [.540] 2x 4.830.50 [.190.020] [.520 +.004 ] ?.006 . lid 13.21 +0.10 ?0.15 0.0381 [.0015] 4x r 0.51 [r.020] max
data sheet 12 of 12 rev. 07, 2007-04-04 we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international goldmo s ? is a registered trademark of infineon technologies ag. edition 2007-04-04 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2004. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ptfa2 6 1301e/f confidential, limited internal distribution revision history: 2007-04-04 data sheet previous version: 2006-06-15 , data sheet page subjects (major changes since last revision) 10, 11 correct package outline information.

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